mmdt3906v pnp plastic-encapsulate transistors features ? epitaxial die construction ? ideal for low power amplification and switching ? ultra-small surface mount package maximum ratings @ 25 o c unless otherwise specified symbol rating rating unit v ceo collector-emitter voltage -40 v v cbo collector-base voltage -40 v v ebo emitter-base voltage -5 v i c collector current-continuous -0.2 a p c collector dissipation 0.15 w r ja thermal resistance junction to ambient 833 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 electrical characteristics @ 25 o c unless otherwise specified symbol parameter min typ max units v (br)ceo collector-emitter breakdown voltage (i c =-1madc, i b =0) -40 --- --- vdc v (br)cbo collector-base breakdown voltage (i c =-10uadc, i e =0) -40 --- --- vdc v (br)ebo collector-emitter breakdown voltage (i e =-10uadc, i c =0) -5 --- --- vdc i cex collector cutoff current (v ce =-30vdc,v eb(off) =-3vdc) --- --- 50 nadc i bl base cutoff current (v ce =-30vdc,v eb(off) =-3vdc) --- --- 50 nadc h fe dc current gain (i c =-0.1madc, v ce =-1vdc) (i c =-1madc, v ce =-1vdc) (i c =-10madc, v ce =-1vdc) (i c =-50madc, v ce =-1vdc) (i c =-100madc, v ce =-1vdc) 60 80 100 60 30 --- --- --- --- --- --- --- 300 --- --- --- v ce(sat) collector-emitter saturation voltage (i c =-10madc, i b =-1madc) (i c =-50madc, i b =-5madc) --- --- --- --- -0.25 -0.4 vdc v be(sat) base-emitter saturation voltage (i c =-10madc, i b =-1madc) (i c =-50madc, i b =-5madc) -0.65 --- --- --- -0.85 -0.95 vdc
omp onents 20736 marilla street chatsworth
mcc revision: 3 2008/01/01 dimensions inches mm dim min max min max note a .006 .011 0.15 0.30 b .043 .049 1.10 1.25 c .061 .067 1.55 1.70 d .020 0.50 g .035 .043 0.90 1.10 h .059 .067 1.50 1.70 k .022 .023 0.56 0.60 l .004 .011 0.10 0.30 m .004 .007 0.10 0.18 sot-563 tm micro commercial components x case material: molded plastic. ul flammability classification rating 94v-0 and msl rating 1 x marking:kar www. mccsemi .com 1 of 4
electrical characteristics @ 25 o c unless otherwise specified symbol parameter min typ max units f t transition frequency (v ce =-20vdc, i c =-10madc, f=100mhz) 250 --- --- mhz c ob output capacitance (v cb =-5vdc, f=1.0mhz, i e =0) --- --- 4.5 pf nf noise figure (v ce =-5v,i c =-0.1ma, f=1khz, r s =1k ) --- --- 4 db t d delay time --- --- 35 ns t r rise time v cc =-3v, i c =-10ma, v be(off) =0.5v, i b1 =-i b2 =-1ma --- --- 35 ns t s storage time --- --- 225 ns t f fall time v cc =-3v, i c =-10ma, i b1 =-i b2 =-1ma --- --- 75 ns revision: 3 2008/01/01 mmdt3906v mcc tm micro commercial components www. mccsemi .com 2 of 4
mmdt3906v mcc revision: 3 2008/01/01 tm micro commercial components www. mccsemi .com 3 of 4
mcc revision: 3 2008/01/01 tm micro commercial components www. mccsemi .com 4 of 4 products are represented on our website, harmless against all damages. ***applications disclaimer*** ***important notice*** aerospace or military applications. products offer by micro commercial components corp . are not intended for use in medical, micro commercial components corp . reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose ordering information device packing (part number)-tp tape&reel;3kpcs/reel
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